| PART |
Description |
Maker |
| KDV350E |
VCO for UHF Band Radio
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(VCO)
|
Korea Electronics (KEC)
KEC[KEC(Korea Electronics)]
|
| ADF4360-1BCP ADF4360-1BCPRL ADF4360-1BCPRL7 ADF436 |
Integrated Synthesizer and VCO TELECOM, CELLULAR, BASEBAND CIRCUIT, QCC24
Integrated Integer-N Synthesizer and VCO - Output Frequency 2050 to 2450
|
Analog Devices, Inc.
|
| HMC512LP5 HMC512LP5E |
MMIC VCO w/ BUFFER AMPLIFIER, 7.1 - 7.9 GHz
MMIC VCO w/ HALF FREQUENCY OUTPUT & DIVIDE-BY-4, 9.6 - 10.8 GHz
|
Hittite Microwave Corporation
|
| IDT54FCT162374ATPFB IDT54FCT162374TPAB IDT54FCT162 |
FAST CMOS 16-BIT REGISTER (3-STATE)
Variable Capacitance Diode for Digital audio; Ratings VR (V): 10; Characteristics n: 2.40 to 3.05; Characteristics rs (ohm) max: 1.8; Characteristics C (pF) max: C1 = 2.60 to 2.90 C3 = 0.97 to 1.08; Characteristics CVR/CVR: 1/3; Cl: -; Package: MP6
Variable Capacitance Diode for VCO; Ratings VR (V): 15; Characteristics n: 2.35 to 2.55; Characteristics rs (ohm) max: 0.6; Characteristics C (pF) max: C1=6.62 to 7.02 C4=2.60 to 2.95; Characteristics CVR/CVR: 1/4; Cl: -; Package: MP6
Variable Capacitance Diode for VCO; Ratings VR (V): 15; Characteristics n: 2.10 to 2.40; Characteristics rs (ohm) max: 0.75; Characteristics C (pF) max: C0.5 = 7.38 to 7.92 C2.5 = 3.26 to3.58; Characteristics CVR/CVR: 0.5/2.5; Cl: -; Package: MP6
Variable Capacitance Diode for VCO; Ratings VR (V): 10; Characteristics n: 1.680 to 1.750; Characteristics rs (ohm) max: 1.2; Characteristics C (pF) max: C1 = 21.50 to 24.00 C2 = 12.50 to 14.50; Characteristics CVR/CVR: 1/2; Cl: 17; Package: SFP
Variable Capacitance Diode for VCO; Ratings VR (V): 15; Characteristics n: 2.43 to 2.57; Characteristics rs (ohm) max: 0.75; Characteristics C (pF) max: C0.5 = 7.30 to 7.70 C2.5 = 2.90 to 3.18; Characteristics CVR/CVR: 0.5/2.5; Cl: -; Package: MP6
Variable Capacitance Diode for VCO; Ratings VR (V): 10; Characteristics n: 2.30 to 2.46; Characteristics rs (ohm) max: 0.4; Characteristics C (pF) max: C0.5 = 18.5 to 20.0 C2.5 = 7.3 to 8.6; Characteristics CVR/CVR: 0.5/2.5; Cl: 7.95; Package: SFP
Variable Capacitance Diode for Digital audio; Ratings VR (V): 10; Characteristics n: 2.28 to 2.90; Characteristics rs (ohm) max: 1.1; Characteristics C (pF) max: C1 = 2.90 to 3.30 C3 = 1.12 to 1.30; Characteristics CVR/CVR: 1/3; Cl: -; Package: MP6
Variable Capacitance Diode for VCO; Ratings VR (V): 10; Characteristics n: 2.02 to 2.26; Characteristics rs (ohm) max: 0.4; Characteristics C (pF) max: C0.5 = 18.5 to 20.0 C2.5 = 8.55 to 9.45; Characteristics CVR/CVR: 0.5/2.5; Cl: -; Package: MP6
Variable Capacitance Diode for VCO; Ratings VR (V): 10; Characteristics n: 2.62 min; Characteristics rs (ohm) max: 0.4; Characteristics C (pF) max: C1 = 14.6 to 15.8 C4 = 5.20 to 5.80; Characteristics CVR/CVR: 1/4; Cl: 5.85; Package: EFP
Variable Capacitance Diode for VCO; Ratings VR (V): 15; Characteristics n: 3.0 min; Characteristics rs (ohm) max: 2; Characteristics C (pF) max: C1 = 41.6 to 49.9 C4 = 10.1 to 14.8; Characteristics CVR/CVR: 1/4; Cl: 12.45; Package: SFP
Variable Capacitance Diode for VCO; Ratings VR (V): 15; Characteristics n: 1.73 to 2.10; Characteristics rs (ohm) max: 0.7; Characteristics C (pF) max: C1 = 2.35 to 2.70 C3 = 1.22 to 1.42; Characteristics CVR/CVR: 1/3; Cl: -; Package: MP6
|
Integrated Device Technology, Inc.
|
| HMC398QS16G06 HMC398QS16G 398QS16GE |
8Ku-Band MMIC VCO with DIVIDE-BY-8, 14.0 - 15.0 GHz
8nullKu-Band MMIC VCO with DIVIDE-BY-8, 14.0 - 15.0 GHz
|
Hittite Microwave Corporation
|
| MQE981-1668 MQE984-1668 |
VCO, 1651.2 MHz - 1684.8 MHz
VCO, 1651 MHz - 1685 MHz
|
MURATA MANUFACTURING CO LTD
|
| ZOS-75 |
VCO, 37.5 MHz - 75 MHz ROHS COMPLIANT, CASE BR386
VCO, 37.5 MHz - 75 MHz CASE BR386
|
Mini-Circuits
|
| CRBV55CL-0920-0980 |
VCO
|
CRYSTEK CORPORATION
|
| CRBV55BE-3025-3125 |
VCO
|
CRYSTEK CORPORATION
|
| CRBV55CW-1600-3200 |
VCO
|
CRYSTEK CORPORATION
|
